Friday, December 02, 2011
IBM, Micron to build hybrid memory with TSVs
Micron Technology Inc's hybrid memory cube (HMC) will become the first commercial CMOS manufacturing technology to employee IBM Corp.'s through-silicon via (TSV) process, the companies said Thursday.
According to IBM (Armonk, N.Y.), the TSVs will enable Micron's HMC devices to achieve speeds 15 times faster than current technology. HMC parts will be manufactured at IBM's advanced semiconductor fab in East Fishkill, N.Y., using the company's 32-nm, high-K metal gate process technology, the companies said.
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According to IBM (Armonk, N.Y.), the TSVs will enable Micron's HMC devices to achieve speeds 15 times faster than current technology. HMC parts will be manufactured at IBM's advanced semiconductor fab in East Fishkill, N.Y., using the company's 32-nm, high-K metal gate process technology, the companies said.
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