Monday, June 30, 2014

Semiconductor quantum dots with single-atom precision



Nippon Telegraph and Telephone Corp. (NTT; Head Office: Chiyoda-ku, Tokyo; President: Hiroo Unoura), the Paul-Drude-Institute (PDI; Germany), and the Naval Research Laboratory (NRL: USA) have cooperatively developed a novel quantum dot*1 (artificial atom*2) and combined artificial molecules*2 with single-atom precision of the position and configuration. This has been realized at a clean surface of semiconductor single crystal thin film manufactured by Molecular Beam Epitaxy (MBE) *3 by using low-temperature Scanning Tunneling Microscope (STM) *4 to integrate atoms one-by-one with an atom manipulation*5 technique.

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99% BAD HARDWARE WEEK:
Quantum dots are often regarded as artificial atoms because, like real atoms, they confine their electrons to quantized states with discrete energies. But the analogy breaks down quickly, because while real atoms are identical, quantum dots usually comprise hundreds or thousands of atoms - with unavoidable variations in their size and shape and, consequently, in their properties and behavior. External electrostatic gates can be used to reduce these variations. But the more ambitious goal of creating quantum dots with intrinsically perfect fidelity by completely eliminating statistical variations in their size, shape, and arrangement has long remained elusive. Until now.

Saturday, June 28, 2014

U.S. Phone Searches Expanded in 2013



The report, by the Director of National Intelligence, focused on the mechanics of a network of surveillance programs that sweep up millions of American phone records and gain indirect access to 75 percent of the nation's telecom infrastructure to facilitate those searches.
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Wednesday, June 25, 2014

eNVM storage

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99% BAD HARDWARE WEEK:

U.S. Economy now shrinks out of recession !!


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99% BAD HARDWARE WEEK: What is NOW recession ?.         5% or more down    



Tuesday, June 24, 2014

Higgs Boson Seems To Prove That The Universe Doesn't Exist

 Here.

Scientific answer: 
Reality is merely an illusion, albeit a very persistent one -A. Einstein
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Einstein believed that the truth of the world escapes our understanding of it, however we hold what we understand about it persistently, even if what we know is just an illusion.

Friday, June 20, 2014

AMD mobile 25x more energy efficient up to year 2020



AMD’s technology plans show every promise of yielding about a 25-fold improvement in typical-use energy efficiency for mobile devices over the next six years, a pace that substantially exceeds historical rates of growth in peak output energy efficiency.  This would be achieved through both performance gains and rapid reductions in the typical-use power of processors. In addition to the benefits of increased performance, the efficiency gains help to extend battery life, enable development of smaller and less material intensive devices, and limit the overall environmental impact of increased numbers of computing devices.”
Moore’s Law states that the number of transistors capable of being built in a given area doubles roughly every two years.  Dr. Koomey’s research demonstrates that historically, energy efficiency of processors has closely tracked the rate of improvement predicted by Moore’s Law.3 Through intelligent power management and APU architectural advances, in tandem with semiconductor manufacturing process technology improvements and a focus on typical-use power, AMD expects its energy efficiency achievements to outpace the historical efficiency trend predicted by Moore’s Law by at least 70 percent between 2014 and 2020.
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99% BAD HARDWARE WEEK: Will it remain exclusively mythology staff check here

New materials and transistors could extend Moore’s Law to 1.5nm or beyond


Beyond 10nm, IC design and manufacturing costs will be enormous. Only a few chipmakers have the technology know-how and resources to design and manufacture these devices. And so, the industry must collaborate more than ever before, said E.S. Jung, executive vice president of the semiconductor R&D center at Samsung Electronics. “We are doing three nodes at the same time in our R&D center. My target is to approach 1.5nm,” Jung said. “How can we make it happen? We need tools, materials and open innovation. Also, we cannot do it all by ourselves.”



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99% BAD HARDWARE WEEK: ITRS 2013 table is wrong only one year later ! Beside, note the lag between manufacturing node and device size. They are not CLOSE as it was 9 years ago.
Seems that Moore's law  was silently switched in 2005 with a LAW OF DIMINISHING RETURNS !

Manufacturers continue to announce new generations, 45 nanometer, 32 nanometer, 22 nanometer, and coming soon, 14 nanometer, though in fact we have been stuck at 65 nanometer for quite some time. There have been process improvements, but these are incremental improvements. The line pitch remains 65 nanometers. We cannot actually build circuits smaller than we could eight years ago. That these are improvements is no lie, but to label them by a size is a lie. If they had said “second generation 65 nanometer” instead of “45 nanometer”, if they had said “third generation 65 nanometer instead of “32 nanometer”, then they would have been speaking truth, or at least speaking hype rather than lies.


DNA is size of 2,5nm. Isn't the last moment to start thinking differently on future arhictecture and purposes ? What if at nano islands of  2, 5 nm transistor is not needed at all ? And that is only 6 times smaller than current transistors we have.
Simply we could have quantum dot pulses as triggering devices, and that can work at room tempereture for practical devices. Say in Graphene-quantum-dot nonvolatile charge-trap flash memory

NSA spied German's BASF and Bundeswehr as terroristic organizations !

 
Stemming from 2009, it includes a list of companies and organizations with domain endings such as .com, .net and .org that are explicitly to be removed from the surveillance efforts because they are German web addresses. Among them are basf.com and bundeswehr.org, but also such domains as orgelbau.com and feuerwehr-ingolstadt.org.
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