Thursday, July 09, 2015
IBM's 7nm SiGe process
This should be 10 nm chip with a 33 nm pitch, not a 7 nm one !
IBM said that would make it possible to build microprocessors with more than 20 billion transistors.The company said on Thursday that it had working samples of chips with seven-nanometer transistors. It made the research advance by using silicon-germanium instead of pure silicon in key regions of the molecular-size switches. The upshot of all of this is that IBM and its OpenPower partners have a line of sight well beyond 2020 for Power10 and possibly for Power11 chips. That all depends on if this 7 nanometer process can be commercialized and brought to Globalfoundries’ chip plants in an economical and timely fashion.
The finfet transistors using SiGe in the channel. were fabricated using self-aligned quadruple patterning (SAQR) .
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99% BAD HARDWARE WEEK: 7 nm SiGe FINFETs with 33 nm pitch and improved electrostatics only in 2020.
Wherever 10 nanometer processes are deployed, given a roughly same die size, a Power9 chip could have around 10 billion transistors – more than twice what is possible on the Power8 chip. Power10 in 7 nm could have 20 billion transistors.
IBM said that would make it possible to build microprocessors with more than 20 billion transistors.The company said on Thursday that it had working samples of chips with seven-nanometer transistors. It made the research advance by using silicon-germanium instead of pure silicon in key regions of the molecular-size switches. The upshot of all of this is that IBM and its OpenPower partners have a line of sight well beyond 2020 for Power10 and possibly for Power11 chips. That all depends on if this 7 nanometer process can be commercialized and brought to Globalfoundries’ chip plants in an economical and timely fashion.
The finfet transistors using SiGe in the channel. were fabricated using self-aligned quadruple patterning (SAQR) .
___________________________
99% BAD HARDWARE WEEK: 7 nm SiGe FINFETs with 33 nm pitch and improved electrostatics only in 2020.
Wherever 10 nanometer processes are deployed, given a roughly same die size, a Power9 chip could have around 10 billion transistors – more than twice what is possible on the Power8 chip. Power10 in 7 nm could have 20 billion transistors.