Thursday, January 24, 2008
Under the Hood: What Intel didn't tell you about 45 nm
The main features of Intel's 45-nanometer process technology are the incorporation of high-k hafnium-based dielectric material, titanium nitride (TiN) for the PFET replacement gate and a TiN barrier alloyed with a work function tuning metal for the NFET replacement gate.
THIS LINK posted by Joseph Bell : 4:53 PM
