BAD HARDWARE WEEK

The cell was developed using IBM's high-k/metal gate (HKMG) materials and process technology at 32nm. And whereas previous attempts to reduce SRAM cell size have required modifications to the doping agents used (impurities are put onto the surface to create desirable electrical effects), the new solution is undoped and greatly increases stability. This allows their cell size to be dramatically reduced (relative to other processes) while increasing stability.

According to IBM, projections indicate the cell size will remain stable even at a point below the projected 22nm process node, though products will first arrive at the 32nm process node (in 2010/2011 ??).