Friday, January 22, 2010
EUV for production fabs for the 13-nm logic node in 2016
More likely scenario will be the advent of EUV for production fabs for the 13-nm logic node in 2016, he said.
As you know 13nm is EUV's native wave length, so it will start only as direct lithography method.
If ever, because only 4 geometry shrinking steps are possible: 10nm, 8nm and 5nm.
After that, no further shinking at all, or forced complete change of used switching principles.
So, EUV is pretty unlikely.
As you know 13nm is EUV's native wave length, so it will start only as direct lithography method.
If ever, because only 4 geometry shrinking steps are possible: 10nm, 8nm and 5nm.
After that, no further shinking at all, or forced complete change of used switching principles.
So, EUV is pretty unlikely.
THIS LINK posted by Joseph Bell : 1:39 PM
