Wednesday, April 22, 2015

What’s Next for Moore’s Law? For Intel, III+V

10 nm ?
99% BAD HARDWARE WEEK: What an idiotism. It is clear bipolar technology and is used for Intel's OmniScale 2 optical fiber integration in 2018.

Exclusive is from BAD HARWARE WEEK: It will run exclusivly not silicon based  devices at 25GHz,  but at 100 Ghz. Or even at 400 Ghz later !

A new method developed by Ali Javey and colleagues that involves using III-Vs grown on insulators using an epitaxial layer transfer process overcomes this problem.
The team transfer ultrathin layers of indium arsenide (for n-type FETs) and indium gallium antimonide (for p-type FETs) from their original growth substrates onto silicon wafers using a two-step process. The structures produced are similar to conventional silicon-on-insulator (SOI) structures except that the top, active, layer is the single-crystal III-V film rather than silicon. The researchers have already made such a platform before, dubbed X on insulator, or XOI.

Intel has nothing in common with SOI production ! Nor manufacturing expertise with SOI.

Comments: Post a Comment

<< Home

This page is powered by Blogger. Isn't yours?