Thursday, July 09, 2015

IBM's 7nm SiGe process

This should be 10 nm chip with a 33 nm pitch, not a 7 nm one !
IBM said that would make it possible to build microprocessors with more than 20 billion transistors.The company said on Thursday that it had working samples of chips with seven-nanometer transistors. It made the research advance by using silicon-germanium instead of pure silicon in key regions of the molecular-size switches. The upshot of all of this is that IBM and its OpenPower partners have a line of sight well beyond 2020 for Power10 and possibly for Power11 chips. That all depends on if this 7 nanometer process can be commercialized and brought to Globalfoundries’ chip plants in an economical and timely fashion.
The finfet transistors using SiGe in the channel. were fabricated using self-aligned quadruple patterning (SAQR) .
99% BAD HARDWARE WEEK: 7 nm SiGe FINFETs with 33 nm pitch and improved electrostatics only in 2020.
Wherever 10 nanometer processes are deployed, given a roughly same die size, a Power9 chip could have around 10 billion transistors – more than twice what is possible on the Power8 chip. Power10 in 7 nm could have 20 billion transistors.

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