Double Oxide Barriers
work like two
antiserial Shottky diodes with memory hysteresis. Switching
speed is up to 10ns and number of possible cycles is up to 10exp12,
though reliability and process variance has been polished since 2011. We
expect to see 8Mb memory banks in Micron products in year 2016. In
8GByte NV memories. Production geometry should be 18-20nm. In 2018 high
performance 10nm geometries are envisioned.
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