Sunday, August 02, 2015

EXCLUSIVE: How exactly Intel's new non volatile memory works

 Double Oxide Barriers work like two antiserial Shottky diodes with memory hysteresis. Switching speed is up to 10ns and number of  possible cycles is up to 10exp12, though reliability and process variance has been polished since 2011. We expect to see 8Mb memory banks in Micron products in year 2016. In 8GByte NV memories. Production geometry should be 18-20nm. In 2018 high performance 10nm geometries are envisioned.

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